View R1WV3216R08_4893748.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

R1W V3216R Series
32Mb Advanced LPSRAM (2M wordx16bit)
REJ03C0215-0300Z Rev.3.00 2008.03.03
Description
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit Advanced LPSRAMs are assembled in one package. The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[TSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards.
Features
* Single 2.7-3.6V power supply * Small stand-by current:4A (3.0V, typ.) * Data retention supply voltage =2.0V * No clocks, No refresh * All inputs and outputs are TTL compatible. * Easy memory expansion by CS1#, CS2, LB# and UB# * Common Data I/O * Three-state outputs: OR-tie capability * OE# prevents data contention on the I/O bus * Process technology: 0.15um CMOS
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 1 of 15
R1W V3216R Series
Ordering Information
Type No. R1WV3216RSD-7S% R1WV3216RSD-8S% R1WV3216RBG-7S% R1WV3216RBG-8S% Access time 70 ns 85 ns 70 ns 7.5mmx8.5mm f-BGA 0.75mm pitch 48ball 85 ns % - Temperature version; see table below % R I Temperature Range 0 ~ +70 C -40 ~ +85 C Package 350-mil 52-pin plastic - TSOP(II) (normal-bend type) (52PTG)
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 2 of 15
R1W V3216R Series
Pin Arrangement
52-pin TSOP
A15 A14 A13 A12 A11 A10 A9 A8 A19 CS1# WE# NC NC Vcc CS2 NC A20 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 A16 BYTE# UB# Vss LB# DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 NC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss NC A0
48-pin fBGA
1 A B C D E F G H
LB#
2
OE#
3
A0 A3 A5 A17
Vss or NC
4
A1 A4 A6 A7 A16 A15 A13 A10
5
A2
CS1#
6
CS2
DQ0
DQ15
UB#
DQ13
DQ14
DQ1
DQ2
Vss Vcc
DQ10
DQ12
DQ3
Vcc Vss
DQ5
DQ11
DQ4
DQ9 A19 A8
A14 A12 A9
DQ6
DQ8
WE# A11
DQ7
A18
A20
(Top view)
Pin Description Pin name
A0 to A20 A-1 to A20 DQ 0 to DQ15 CS1# &CS2 WE# OE# LB# UB# Vcc Vss BYTE# NC
Note: Byte Mode is supported by only 52-pin TSOP type.
Function
Address input (Word mode) Address input (Byte mode) Data input/output Chip select Write enable Output enable Lower byte select Upper byte select Power supply Ground Byte (x8 mode) enable input Non connection
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 3 of 15
R1W V3216R Series
Block Diagram
SENSE Amp.
ADDRESS BUFFER
A0
Memory Array
DECODER
SENSE Amp.
A20 CS2 CS1# LB# UB# BYTE# WE# OE#
OUTPUT BUFFER
1048576 Words x 16BITS OR 2097152 Words x 8BITS CLOCK GENERATOR
DATA SELECTOR
OUTPUT BUFFER
DQ0
DQ7 DQ8 DQ15 / A-1
DATA SELECTOR
DATA INPUT BUFFER
Vcc Vss
16Mb Advanced LPSRAM #1 16Mb Advanced LPSRAM #2
Note: BYTE# pin is supported by only 52-pin TSOP type.
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 4 of 15
DATA INPUT BUFFER
x8/x16 SWITCHING CIRCUIT
R1W V3216R Series
Operating Table
CS1# H X X L L L L L L L L L CS2 X L X H H H H H H H H H BYTE# X X H H H X H H H H L L LB# X X H L L X H H L L L L UB# X X H H H X L L L L L L WE# X X X L H H L H L H L H OE# X X X X L H X L X L X L DQ0-7 High-Z High-Z High-Z Din Dout High-Z High-Z High-Z Din Dout Din Dout DQ8-14 High-Z High-Z High-Z High-Z High-Z High-Z Din Dout Din Dout High-Z High-Z DQ15 High-Z High-Z High-Z High-Z High-Z High-Z Din Dout Din Dout A-1 A-1 Operation Stand by Stand by Stand by Write in lower byte Read from lower byte Output disable Write in upper byte Read from upper byte Write Read Write Read
Note 1. H:VIH L:VIL X: VIH or VIL 2. BYTE# pin is supported by only 52-pin TSOP type. When apply BYTE# ="L" , please assign LB#=UB#="L".
Absolute Maximum Ratings Parameter
Power supply voltage relative to Vss Terminal voltage on any pin relation toVss Power dissipation Operation temperature Storage temperature Storage temperature range under bias
Symbol
Vcc VT PT R ver. *3 Topr I ver. *3 Tstg R ver. *3 Tbias I ver. *3
Value
-0.5 to +4.6 -0.5*1 to Vcc+0.3*2 0.7 0 to +70 -40 to +85 -65 to +150 0 to +70 -40 to +85
Unit
V V W C C C C C
Note 1: -2.0V in case of AC (Pulse width 30ns) 2: Maximum voltage is +4.6V 3: Temperature range depends on R/I-version. Please see table on page 2.
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 5 of 15
R1W V3216R Series
Recommended Operating Conditions Parameter
Supply voltage Input high voltage Input low voltage Ambient temperature range R ver. I ver.
Symbol
Vcc Vss VIH VIL Ta
Min.
2.7 0 2.4 -0.2 0 -40
Typ.
3.0 0 -
Max.
3.6 0 Vcc+0.2 0.4 +70 +85
Unit
V V V V C C
Note
1 2 2
Note 1. -2.0V in case of AC (Pulse width 30ns) 2. Ambient temperature range depends on R/I-version. Please see table on page 2.
DC Characteristics Parameter
Input leakage current
Symbol |ILI| |ILo|
Min.
-
Typ.
-
Max.
1
Unit
A
Test conditions*3
Vin=Vss to Vcc BYTE# Vcc-0.2V or BYTE# 0.2V, CS1# =VIH or CS2=VIL or OE# = VIH or WE# =VIL or LB# =UB# =VIH,VI/O=Vss to Vcc BYTE# Vcc-0.2V or BYTE# 0.2V, Min. cycle, duty =100% I I/O = 0 mA, CS1# =VIL, CS2=VIH Others = VIH / VIL BYTE# Vcc-0.2V or BYTE# 0.2V,
Output leakage current
-
-
1
A
Icc1
Average operating current
-
30 *1
55
mA
Icc2
-
3 *1
8
mA
Cycle time = 1 s, I I/O = 0 mA, CS1# 0.2V, CS2 VCC-0.2V VIH VCC-0.2V , VIL 0.2V, duty=100% BYTE# Vcc-0.2V or BYTE#0.2V, CS2=VIL
Standby current
ISB
-
0.1 *1 4 *1 7 *2 -
0.3 12 24 50 80 0.4
mA A A A A V V
~+25C V in 0V, ~+40C ~+70C ~+85C
Standby current
ISB1
-
BYTE# Vcc-0.2V or BYTE#0.2V, (1) 0VCS20.2V or (2) CS2Vcc-0.2V, CS1# Vcc-0.2V or (3)LB# =UB# Vcc-0.2V, CS2Vcc-0.2V, CS1# 0.2V Average value
Output high voltage Output Low voltage
VOH VOL
2.4 -
BYTE# Vcc-0.2V or BYTE#0.2V, IOH = -1mA BYTE# Vcc-0.2V or BYTE#0.2V, IOL = 2mA
Note 1. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 25C), and not 100% tested. 2. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 40C), and not 100% tested. 3. BYTE# pin is supported by only 52-pin TSOP type. REJ03C0215-0300Z Rev.3.00 2008.03.03 page 6 of 15
R1W V3216R Series
Capacitance
(Ta = +25C, f =1MHz)
Parameter
Input capacitance Input / output capacitance
Symbol
C in C I/O
Min.
-
Typ.
-
Max.
20 20
Unit
pF pF
Test conditions
V in = 0V V I/O = 0V
Note
1 1
Note 1. This parameter is sampled and not 100% tested.
AC Characteristics
Test Conditions (Vcc=2.7~3.6V, Ta = 0~+70C / -40~+85C *)
* Input pulse levels: VIL= 0.4V,VIH=2.4V * Input rise and fall time : 5ns * Input and output timing reference levels : 1.4V * Output load : See figures (Including scope and jig)
1.4V RL=500 DQ CL=30pF
Note: Temperature range depends on R/I-version. Please see table on page 2.
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 7 of 15
R1W V3216R Series
Read Cycle
Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change LB#,UB# access time Chip select to output in low-Z LB#,UB# enable to low-Z Output enable to output in low-Z Chip deselect to output in high-Z LB#,UB# disable to high-Z Output disable to output in high-Z Symbol R1WV3216R**-7S Min. Max. 70 10 10 5 5 0 0 0 0 70 70 70 35 70 25 25 25 25 R1WV3216R**-8S Min. Max. 85 10 10 5 5 0 0 0 0 85 85 85 45 85 30 30 30 30 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns 2,3 2,3 2,3 1,2,3 1,2,3 1,2,3 1,2,3 Notes
tRC tAA tACS1 tACS2 tOE tOH tBA tCLZ tBLZ tOLZ tCHZ1 tCHZ2 tBHZ tOHZ
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 8 of 15
R1W V3216R Series
Write Cycle
Parameter Write cycle time Address valid to end of write Chip selection to end of write Write pulse width LB#,UB# valid to end of write Address setup time Write recovery time Data to write time overlap Data hold from write time Output active from end of write Output disable to output in high-Z Write to output in high-Z Symbol R1WV3216R**-7S Min. Max. 70 65 65 55 65 0 0 35 0 5 0 0 25 25 R1WV3216R**-8S Min. Max. 85 70 70 60 70 0 0 40 0 5 0 0 30 30 Unit ns ns ns ns ns ns ns ns ns ns ns ns 2 1,2 1,2 6 7 5 4 Notes
tWC tAW tCW tWP tBW tAS tWR tDW tDH tOW tOHZ tWHZ
Byte Enable (supported by only 52-pin TSOP )
Parameter Byte setup time Byte recovery time Symbol R1WV3216R**-7S Min. Max. 5 5 R1WV3216R**-8S Min. Max. 5 5 Unit ms ms Notes
tBS tBR
Note 1. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions
and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. AT any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and form device to device. 4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#. A write begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB# going low or UB# going low . A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and LB# going high or UB# going high. tWP is measured from the beginning of write to the end of write. 5. tCW is measured from the later of CS1# going low or CS2 going high to end of write. 6. tAS is measured the address valid to the beginning of write. 7. tWR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle.
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 9 of 15
R1W V3216R Series
Timing Waveform
Read Timing Waveform A0~20
(Word Mode)
tRC
Valid address
A-1~20
(Byte Mode)
tAA tBA
tOH
LB#,UB#
tBHZ
CS1#
tACS1 tCHZ1
CS2
tACS2 tCHZ2 tOE
OE#
WE# = "H" level
DQ0~15
(Word Mode)
tOLZ tCLZ tBLZ
tOHZ
Valid data
DQ0~7
(Byte Mode)
Note: Byte Mode is supported by only 52-pin TSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 10 of 15
R1W V3216R Series
Write Timing Waveform (1) (WE# CLOCK)
tWC
A0~20
(Word Mode)
A-1~20
(Byte Mode)
Valid address
tBW tCW tCW tAW tAS tWP tWHZ tOW tWR
LB#,UB# CS1#
CS2
WE#
DQ0~15
(Word Mode)
tDW
tDH
DQ0~7
(Byte Mode)
Valid data
Note: Byte Mode is supported by only 52-pin TSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 11 of 15
R1W V3216R Series
Write Timing Waveform (2) (CS1#, CS2 CLOCK, OE#=VIH)
tWC
A0~20
(Word Mode)
A-1~20
(Byte Mode)
Valid address
tBW
LB#,UB#
CS1#
tAS
CS2
tCW tCW tWP tDW
tWR
WE# DQ0~15
(Word Mode)
tDH
DQ0~7
(Byte Mode)
Valid data
Note: Byte Mode is supported by only 52-pin TSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 12 of 15
R1W V3216R Series
Write Timing Waveform (3) (LB#,UB# CLOCK, OE#=VIH)
tWC
A0~20
(Word Mode)
A-1~20
(Byte Mode)
Valid address
tAS
tBW
tWR
LB#,UB# CS1#
tCW tCW
CS2
WE#
tWP tDW tDH
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
Valid data
Note: Byte Mode is supported by only 52-pin TSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V
BYTE# Timing Waveform CS2 CS1#
tBS
BYTE#
tBR
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 13 of 15
R1W V3216R Series
Data Retention Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions*3,4
V in 0V, BYTE#Vcc-0.2V or BYTE#0.2V (1) 0V CS2 0.2V or (2) CS2 Vcc-0.2V, CS1# Vcc-0.2V or (3) LB# =UB# Vcc-0.2V, CS2 Vcc-0.2V, CS1# 0.2V
Vcc for data retention
VDR
2.0
-
3.6
V
Data retention current
4 *1 7 *2 -
12 24 50 80 -
A A A A ns
~+25C ~+40C ~+70C ~+85C
IccDR
-
Vcc=3.0V,Vin0V, BYTE# Vcc-0.2V or BYTE# 0.2V (1) 0V CS2 0.2V or (2) CS2 Vcc-0.2V, CS1# Vcc-0.2V or (3) LB# =UB# Vcc-0.2V, CS2 Vcc-0.2V, CS1# 0.2V Average value
Chip deselect to data retention time Operation recovery time
tCDR tR
0 5
See retention waveform ms
Note 1. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 25C) and not 100% tested. 2. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 40C) and not 100% tested. 3. BYTE# pin is supported by only 52-pin TSOP type. 4. Also CS2 controls address buffer, WE# buffer ,CS1# buffer ,OE# buffer ,LB# ,UB# buffer and Din buffer .If CS2 controls data retention mode,Vin levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance state. If CS1# controls data retention mode, CS2 must be CS2 Vcc-0.2V or 0V CS2 0.2V. The other input levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance state.
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 14 of 15
R1W V3216R Series
Low Vcc Data Retention Timing Waveform (1) (CS1# Controlled)
tCDR
Vcc
2.7V
Data retention mode
tR
2.4V
V DR
CS1# 0V
Note: BYTE# pin is supported by only 52-pin TSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V
CS1# Vcc-0.2V
Low Vcc Data Retention Timing Waveform (2) (CS2 Controlled)
tCDR
Vcc
2.7V
Data retention mode
tR
CS2 V DR
0.2V 0V
Note: BYTE# pin is supported by only 52-pin TSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V
0V CS2 0.2V
Low Vcc Data Retention Timing Waveform (3) (LB#, UB# Controlled)
tCDR
Vcc
2.7V
Data retention mode
tR
2.4V
V DR
LB#, UB# 0V
Note: BYTE# pin is supported by only 52-pin TSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V
LB#, UB# Vcc-0.2V
REJ03C0215-0300Z Rev.3.00 2008.03.03 page 15 of 15
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2008. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2

▲Up To Search▲

Price & Availability of R1WV3216R08

	To Download R1WV3216R08 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .